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Dry Etching

PlasmaTherm SLR720

• Gases available: Ar, CH4F4, SF6, O2
• Pressure range: 100 – 400 mTorr
• Power range: 50 – 400 watts
• Commonly Etched Materials: Silicon, Tantalum, BCB, polyimide
• Substrate compatibility: Wafers (most materials) up to 150mm (6”)
• Description: The PlasmaTherm SLR720 is an RF Reactive Ion Etcher (RIE) with a single wafer chamber and load lock. The typical etch rate of silicon in the system is 1 micron per minute.

Surface Technology Systems Advanced Silicon Etcher (ASE-Gen1)

• Gases available: Ar, C4F8, SF6, O2
• Pressure range: 15 – 30 mTorr
• Power range: * Platen power: 3 – 300 watts * Coil power: 100 – 1000 watts
• Etched Materials: Silicon ONLY
• Substrate compatibility: Silicon wafers, 125mm only
• Description: The STS ASE-Gen1 implements the Bosch process on an ICP core for high-aspect ratio etching of silicon at a rate of 3 microns per minute.